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Material Performance project specification Detection method Growing patterns Cz -- Crystallinity Single crystal Optimum corrosion method
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Description
Material Performance
| project | specification | Detection method |
| Growing patterns | Cz | -- |
| Crystallinity | Single crystal | Optimum corrosion method |
| Geometric dimensions | M6:166mm*223mm M10:182mm*247mm |
Silicon wafer automatic detection equipment |
| thickness | 165 ﹢20/﹣10 µm 160 ﹢20/﹣10 µm 155 ﹢20/﹣10 µm 150 ﹢10/﹣10 µm |
Silicon wafer automatic detection equipment |
Electrical properties
| project | specification | Detection method |
| Resistivity | 0.3-2.1 ohm.cm 1-7 ohm.cm | Silicon wafer automatic detection equipment |
| Declining child life expectancy | ≥500us ≥1000us |
Sinton BCT-400 QSSPC Quasi-steady-State Photoconductive Attenuation Transient Photoconductive Attenuation (with injection level: 1E15 cm- 3) |
| Oxygen content | ≤8E+17 at/cm3 | Fourier transform infrared spectrometer |
| Carbon content | ≤5E+16 at/cm3 | Fourier transform infrared spectrometer |
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