Dimensions: 166mm × 166mm ± 0.25mm (diameter 223 ± 0.25mm) Thickness (battery): 170 ± 20 μm Front (-): silicon dioxide + blue silicon nitride composite anti-reflection film (PID Free); busbar width 0.1±0.05mm, busbar head is bifurcated; spine-shaped Ag grid lines parallel to busbar lines ; The number of secondary grid lines is 116±10; the pattern is half-piece design. Backside (+) of double-sided cell: passivated reflector (alumina and silicon nitride composite layer); the back electrode consists of 9 backside composite busbars and 138±10 backside Al subgrids; backside composite busbars Local narrowing, that is, Al electrodes of 2.6±0.2mm and 1.9±0.2mm appear alternately; six-segment Ag electrodes with a width of 2.1±0.2mm are embedded in the Al electrodes, and 1.3±0.5mm of nitride is exposed at both ends of each Ag electrode silicon. Single-sided cell back (+): passivated reflector (alumina and silicon nitride composite layer); the back electrode consists of 9 interrupted busbar lines and Al back field; the width of each interrupted busbar line is 1.9±0.2 mm, with a six-segment width of 2.1 ± 0.2 mm Ag electrodes are embedded in the Al electrodes, and 1.3 ± 0.5 mm of silicon nitride is exposed at both ends of each Ag electrode. Other regions are covered by the Al backfield.