Size: 182mm×182mm (diameter 247±0.5mm) Thickness (battery): 170±20μm Front (−): silicon dioxide + blue silicon nitride composite anti-reflection film (PID Free); the front pattern is a half-chip design; the head of the busbar is a large bifurcation, and the pads of the busbar are intermittently stepped. The outer pad size is 1.2 ± 0.15mm * 1.3 ± 0.15mm, and the middle pad size is 0.8 ± 0.15mm * 1 ± 0.15mm.   Back (+): passivation composite layer (alumina and silicon nitride); the back electrode consists of 10 back composite busbars and 160 backside Al sub-grids; the composite busbars are locally narrowed, with a width of 1.5±0.3mm and 1.0±0.3mm; 8-segment 1.45±0.3mm Ag back electrode, no laser slot under the back electrode, round head of back electrode and 1.5±0.6mm hollow at both ends.