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Monocrystalline 210-12BB Double Sided Cell
Size: 210mm×210mm (diameter 295±0.25mm) Thickness (battery): 170 ± 20 μm Front (-): silicon dioxide plus silicon nitride blue composite anti-reflection film (PID Free); half-chip design, 12 busbars, 120-180 subgrids; busbar width 0.06±0.02mm, two busbars Segmented, two-end large bifurcated design, single busbar with 4 large bifurcations, large bifurcation size (1.7±0.1mm)×(6.4±0.1)mm, 14 solder joints at the connection between the busbar and the fine grid, Solder joint size (1.5±0.15)mm×(0.9±0.15)mm. Back (+): Alumina and silicon nitride composite layer; back electrode consists of 12 back composite busbar lines and 150-250 Al grid lines; 8-segment 1.9±0.2 mm Ag electrode.
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Size: 210mm×210mm (diameter 295±0.25mm)
Thickness (battery): 170 ± 20 μm
Front (-): silicon dioxide plus silicon nitride blue composite anti-reflection film (PID Free); half-chip design, 12 busbars, 120-180 subgrids; busbar width 0.06±0.02mm, two busbars Segmented, two-end large bifurcated design, single busbar with 4 large bifurcations, large bifurcation size (1.7±0.1mm)×(6.4±0.1)mm, 14 solder joints at the connection between the busbar and the fine grid, Solder joint size (1.5±0.15)mm×(0.9±0.15)mm.
Back (+): Alumina and silicon nitride composite layer; back electrode consists of 12 back composite busbar lines and 150-250 Al grid lines; 8-segment 1.9±0.2 mm Ag electrode.
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